A Low Area Overhead NBTI PBTI Sensor for SRAM Memories - MyprojectBazaar from bias temperature instability Watch Video
Preview(s):
Gallery
Play Video: (Note: The default playback of the video is HD VERSION. If your browser is buffering the video slowly, please play the REGULAR MP4 VERSION or Open The Video below for better experience. Thank you!)
Description: Bias temperature instability (BTI) is known as one serious reliability concern in nanoscale technologies. BTI gradually increases the absolute value of threshold voltage (Vth) of MOS transistors. The main consequence of Vth shift of the SRAM cell transistors is the static noise margin (SNM) degradation. The SNM degradation of SRAM cells results in bit-flip occurrences due to transient faults and should be monitored accurately. This paper proposes a sensor called write current-based BTI sensor (W
Play Video: (Note: The default playback of the video is HD VERSION. If your browser is buffering the video slowly, please play the REGULAR MP4 VERSION or Open The Video below for better experience. Thank you!)